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1 ? fn7186.2 el5120, el5220, EL5420 12mhz rail-to-rail input-output op amps the el5120, el5220, and EL5420 are low power, high voltage, rail-to- rail input-output amplifiers. the el5120 contains a single amplifier, the el5220 contains two amplifiers, and the EL5420 contains four amplifiers. operating on supplies ranging from 5v to 15v, while consuming only 500a per ampl ifier, the el5120, el5220, and EL5420 have a bandwidth of 12mhz (-3db). they also provide common mode input ability beyond the supply rails, as well as rail-to-rail output capability. this enables these amplifiers to offer maximum dynamic range at any supply voltage. the el5120, el5220, and EL5420 also feature fast slewing and settling times, as well as a high output drive capability of 30ma (sink and source). these features make these amplifiers ideal for use as voltage reference buffers in thin film transistor liquid crystal displays (tft-lcd). other applications include battery power, portable devices, and anywhere low power consumption is important. the EL5420 is available in the space-saving 14-pin tssop package, the industry-standard 14-pin so package, as well as the 16-pin qfn package. the el5220 is available in the 8-pin msop package and the el5120 is available in the 5- pin tsot and 8-pin hmsop packages. all feature a standard operational amplifier pin out. these amplifiers are specified for operation over the full -40c to +85c temperature range. features ? 12mhz -3db bandwidth ? supply voltage = 4.5v to 16.5v ? low supply current (per amplifier) = 500a ? high slew rate = 10v/s ? unity-gain stable ? beyond the rails input capability ? rail-to-rail output swing ? ultra-small package ? pb-free available applications ? tft-lcd drive circuits ? electronics notebooks ? electronics games ? touch-screen displays ? personal communication devices ? personal digital assistants (pda) ? portable instrumentation ? sampling adc amplifiers ? wireless lans ? office automation ? active filters ? adc/dac buffer data sheet july 7, 2004 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | intersil (and design) is a registered trademark of intersil americas inc. copyright ? intersil americas inc. 2002-2004. all rights reserved. elantec is a registered trademark of elantec semiconductor, inc. all other trademarks mentioned are the property of their respective owners.
2 pinouts ordering information part number package tape & r e e l p k g. d w g. # el5120iwt-t7 5-pin tsot 7? (3k pcs) mdp0049 el5120iwt-t7a 5-pin tsot 7? (250 pcs) mdp0049 el5120iwtz-t7 (see note) 5-pin tsot (pb-free) 7? (3k pcs) mdp0049 el5120iwtz-t7a (see note) 5-pin tsot (pb-free) 7? (250 pcs) mdp0049 el5120iye 8-pin hmsop - mdp0050 el5120iye-t7 8-pin hmsop 7? mdp0050 el5120iye-t13 8-pin hmsop 13? mdp0050 el5120iyez (see note) 8-pin hmsop (pb-free) - mdp0050 el5120iyez-t7 (see note) 8-pin hmsop (pb-free) 7? mdp0050 el5120iyez-t13 (see note) 8-pin hmsop (pb-free) 13? mdp0050 el5220cy 8-pin msop - mdp0043 el5220cy-t7 8-pin msop 7? mdp0043 el5220cy-13 8-pin msop 13? mdp0043 el5220cyz (see note) 8-pin msop (pb-free) - mdp0043 el5220cyz-t7 (see note) 8-pin msop (pb-free) 7? mdp0043 el5220cyz-t13 (see note) 8-pin msop (pb-free) 13? mdp0043 EL5420cl 16-pin qfn - mdp0046 EL5420cl-t7 16-pin qfn 7? mdp0046 EL5420cl-t13 16-pin qfn 13? mdp0046 EL5420clz (see note) 16-pin qfn (pb-free) - mdp0046 EL5420clz-t7 (see note) 16-pin qfn (pb-free) 7? mdp0046 EL5420clz-t13 (see note) 16-pin qfn (pb-free) 13? mdp0046 EL5420cs 14-pin so - mdp0027 EL5420cs-t7 14-pin so 7? mdp0027 EL5420cs-t13 14-pin so 13? mdp0027 EL5420cr 14-pin tssop - mdp0044 EL5420cr-t7 14-pin tssop 7? mdp0044 EL5420cr-t13 14-pin tssop 13? mdp0044 EL5420crz (note) 14-pin tssop (pb-free) - mdp0044 EL5420crz-t7 (note) 14-pin tssop (pb-free) 7? mdp0044 EL5420crz-t13 (note) 14-pin tssop (pb-free) 13? mdp0044 note: intersil pb-free products employ special pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which is compatible with both snpb and pb-free soldering operations. intersil pb-free products are msl classified at pb-free peak reflow temperatures that meet or exceed the pb-free requirements of ipc/jedec j std-020b. ordering information (continued) part number package tape & reel pkg. dwg. # EL5420 (16-pin qfn) top view 1 2 3 5 4 1 2 3 4 8 7 6 5 1 2 3 4 12 11 10 9 5 6 7 8 16 15 14 13 vina- vina+ vs+ vinb+ vinb- voutb voutc vinc- nc vouta voutd nc vind- vind+ vs- vinc+ vs+ vin- vin+ vs- vout vs+ voutb vinb- vinb+ vs- vina+ vina- vouta - + - + - + thermal pad el5220 (8-pin msop) top view el5120 (5-pin tsot) top view 1 2 3 4 8 7 6 5 nc vs+ out nc vs- in+ in- nc - + el5120 (8-pin hmsop) top view 1 2 3 4 14 13 12 11 5 6 7 10 9 8 -+ - + voutd vind- vind+ vs- vinc+ vinc- voutc voutb vinb- vinb+ vs+ vina+ vina- vouta -+ - + EL5420 (14-pin tssop, so) top view el5120, el5220, EL5420
3 important note: all parameters having min/max specifications are guaranteed. typ values are for information purposes only. unles s otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: t j = t c = t a absolute maximum ratings (t a = 25c) supply voltage between v s + and v s - . . . . . . . . . . . . . . . . . . . .+18v input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . v s - - 0.5v, v s +0.5v maximum continuous output current . . . . . . . . . . . . . . . . . . . 30ma maximum die temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +125c storage temperature . . . . . . . . . . . . . . . . . . . . . . . .-65c to +150c ambient operating temperature . . . . . . . . . . . . . . . .-40c to +85c power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see curves caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. electrical specifications v s + = +5v, v s - = -5v, r l = 10k ? and c l = 10pf to 0v, t a = 25c, unless otherwise specified. parameter description conditions min typ max unit input characteristics v os input offset voltage v cm = 0v 2 12 mv tcv os average offset voltage drift (note 1) 5 v/c i b input bias current v cm = 0v 2 50 na r in input impedance 1g ? c in input capacitance 1.35 pf cmir common-mode input range -5.5 +5.5 v cmrr common-mode rejection ratio for v in from -5.5v to +5.5v 50 70 db a vol open loop gain -4.5v v out + 4.5v 75 95 db output characteristics v ol output swing low i l = -5ma -4.92 -4.85 v v oh output swing high i l = 5ma 4.85 4.92 v i sc short circuit current 120 ma i out output current 30 ma power supply performance psrr power supply rejection ratio v s is moved from 2.25v to 7.75v 60 80 db i s supply current (per amplifier) no load 500 750 a dynamic performance sr slew rate (note 2) -4.0v v out + 4.0v, 20% to 80% 10 v/s t s settling to +0.1% (a v = +1) (a v = +1), v o = 2v step 500 ns bw -3db bandwidth r l = 10k ? , c l = 10pf 12 mhz gbwp gain-bandwidth product r l = 10k ? , c l = 10pf 8 mhz pm phase margin r l = 10k ? , c l = 10 pf 50 cs channel separation f = 5mhz (el5220 & EL5420 only) 75 db notes: 1. measured over operating temperature range 2. slew rate is measured on rising and falling edges el5120, el5220, EL5420
4 electrical specifications v s + = +5v, v s - = 0v, r l = 10k ? and c l = 10pf to 2.5v, t a = 25c, unless otherwise specified. parameter description conditions min typ max unit input characteristics v os input offset voltage v cm = 2.5v 2 10 mv tcv os average offset voltage drift (note 1) 5 v/c i b input bias current v cm = 2.5v 2 50 na r in input impedance 1g ? c in input capacitance 1.35 pf cmir common-mode input range -0.5 +5.5 v cmrr common-mode rejection ratio for v in from -0.5v to +5.5v 45 66 db a vol open loop gain 0.5v v out + 4.5v 75 95 db output characteristics v ol output swing low i l = -5ma 80 150 mv v oh output swing high i l = +5ma 4.85 4.92 v i sc short circuit current 120 ma i out output current 30 ma power supply performance psrr power supply rejection ratio v s is moved from 4.5v to 15.5v 60 80 db i s supply current (per amplifier) no load 500 750 a dynamic performance sr slew rate (note 2) 1v v out 4v, 20% to 80% 10 v/s t s settling to +0.1% (a v = +1) (a v = +1), v o = 2v step 500 ns bw -3db bandwidth r l = 10k ? , c l = 10pf 12 mhz gbwp gain-bandwidth product r l = 10 k ? , c l = 10pf 8 mhz pm phase margin r l = 10 k ? , c l = 10 pf 50 cs channel separation f = 5mhz (el5220 & EL5420 only) 75 db notes: 1. measured over operating temperature range 2. slew rate is measured on rising and falling edges el5120, el5220, EL5420
5 electrical specifications v s + = +15v, v s - = 0v, r l = 10k ? and c l = 10pf to 7.5v, t a = 25c, unless otherwise specified. parameter description conditions min typ max unit input characteristics v os input offset voltage v cm = 7.5v 2 14 mv tcv os average offset voltage drift (note 1) 5 v/c i b input bias current v cm = 7.5v 2 50 na r in input impedance 1g ? c in input capacitance 1.35 pf cmir common-mode input range -0.5 +15.5 v cmrr common-mode rejection ratio for v in from -0.5v to +15.5v 53 72 db a vol open loop gain 0.5v v out 14.5v 75 95 db output characteristics v ol output swing low i l = -5ma 80 150 mv v oh output swing high i l = +5ma 14.85 14.92 v i sc short circuit current 120 ma i out output current 30 ma power supply performance psrr power supply rejection ratio v s is moved from 4.5v to 15.5v 60 80 db i s supply current (per amplifier) no load 500 750 a dynamic performance sr slew rate (note 2) 1v v out 14v, 20% to 80% 10 v/s t s settling to +0.1% (a v = +1) (a v = +1), v o = 2v step 500 ns bw -3db bandwidth r l = 10k ? , c l = 10pf 12 mhz gbwp gain-bandwidth product r l = 10k ? , c l = 10pf 8 mhz pm phase margin r l = 10k ? , c l = 10 pf 50 cs channel separation f = 5mhz (el5220 & EL5420 only) 75 db notes: 1. measured over operating temperature range 2. slew rate is measured on rising and falling edges el5120, el5220, EL5420
6 typical performance curves figure 1. EL5420 input offset voltage distributi on figure 2. EL5420 input offset voltage drift figure 3. input offset voltage vs temperatur e figure 4. input bias current vs temperature figure 5. output high voltage vs temperature figure 6. output low voltage vs temperature 400 1200 quantity (amplifiers) input offset voltage (mv) 0 -12 1800 1600 800 200 1400 1000 600 -10 -8 -6 -4 -2 -0 2 4 6 8 10 12 v s =5v t a =25c typical production distribution input offset voltage drift, tcv os (v/c) 1 3 5 7 9 11 13 15 17 19 21 10 50 quantity (amplifiers) 0 70 30 60 40 20 v s =5v typical production distribution 0 150 0 5 input offset voltage (mv) temperature (c) -5 50 -50 100 10 v s =5v 0.0 input bias current (na) temperature (c) -2.0 2.0 0 150 50 -50 100 v s =5v 4.94 4.95 output high voltage (v) 4.93 4.97 0 150 temperature (c) 50 -50 100 4.96 v s =5v i out =5ma -4.95 -4.93 output low voltage (v) -4.97 -4.91 0 150 temperature (c) 50 -50 100 -4.92 -4.94 -4.96 v s =5v i out =-5ma el5120, el5220, EL5420
7 figure 7. open loop gain vs temperature figure 8. slew rate vs temperature figure 9. EL5420 supply current per amplifier vs temperature figure 10. EL5420 supply current per amplifier vs supply voltage figure 11. open loop gain and phase vs freque ncy figure 12. frequency response for various r l typical performance curves (continued) 80 90 open loop gain (db) 100 0150 temperature (c) 50 -50 100 v s =5v r l =10k ? 0 150 10.30 10.35 slew rate (v/s) temperature (c) 10.25 50 -50 100 10.40 v s =5v 0.5 0.55 supply current (ma) 0.45 0150 temperature (c) 50 -50 100 v s =5v 520 400 600 supply current (a) supply voltage (v) 300 10 0 700 500 15 t a =25c 10 10k 100m 50 200 frequency (hz) -50 gain (db) phase () 20 -130 -230 100 1k 100k 1m 10m 150 0 100 -30 -80 -180 v s =5v, t a =25c r l =10k ? to gnd c l =12pf to gnd phase gain 1m 100m -5 0 magnitude (normalized) (db) frequency (hz) -15 10m 100k 5 -10 c l =10pf a v =1 v s =5v 10k ? 1k ? 560 ? 150 ? el5120, el5220, EL5420
8 figure 13. frequency response for various c l figure 14. closed loop output impedance vs frequency figure 15. maximum output swing vs fr equency figure 16. cmrr vs frequency figure 17. psrr vs frequency figure 18. inpu t voltage noise spectral density vs frequency typical performance curves (continued) 1m 100m frequency (hz) 10m 100k 0 10 magnitude (normalized) (db) -30 20 -20 -10 r l =10k ? a v =1 v s =5v 12pf 50pf 100pf 1000pf output impedance ( ? ) frequency (hz) 10k 100k 0 40 80 120 200 1m 160 10m a v =1 v s =5v t a =25c maximum output swing (v p-p ) frequency (hz) 10k 100k 0 2 4 12 1m 6 10m 8 10 v s =5v t a =25c a v =1 r l =10k ? c l =12pf distortion <1% 100 0 cmrr (db) frequency (hz) 80 60 40 20 1m 10m 10k 100k 1k v s =5v t a =25c 100 0 psrr (db) frequency (hz) 80 60 40 20 1m 10m 10k 100k v s =5v t a =25c 1k psrr+ psrr- 100 100k 100m 10 100 voltage noise (nv/ hz) frequency (hz) 1 10m 1k 10k 1m 600 el5120, el5220, EL5420
9 figure 19. total harmonic distortion + noise vs frequency figure 20. channel separation vs frequency response figure 21. small signal overshoot vs load capacitance figure 22. settling time vs step size figure 23. large signal trans ient response figure 24. smal l signal transient response typical performance curves (continued) 1k 10k 100k 0.005 0.008 frequency (hz) thd+ n (%) 0.010 0.001 0.003 v s =5v r l =10k ? a v =1 v in =1v rms 0.006 0.009 0.007 0.004 0.002 1k -60 x-talk (db) frequency (hz) -140 -120 -100 -80 1m 6m 10k 100k v s =5v r l =10k ? a v =1 v in =220mv rms dual measured channel a to b quad measured channel a to d or b to c other combinations yield improved rejection 10 100 1k load capacitance (pf) overshoot (%) v s =5v a v =1 r l =10k ? v in =50mv t a =25c 50 90 70 30 10 800 -2 2 step size (v) settling time (ns) 600 0 4 200 400 3 1 -3 0 -1 -4 v s =5v a v =1 r l =10k ? c l =12pf t a =25c 0.1% 0.1% v s =5v t a =25c a v =1 r l =10k ? c l =12pf 1v 1s v s =5v t a =25c a v =1 r l =10k ? c l =12pf 50mv 200ns el5120, el5220, EL5420
10 applications information product description the el5120, el5220, and EL5420 voltage feedback amplifiers are fabricated using a high voltage cmos process. they exhibit rail-to-rail input and output capability, they are unity gain stable, and have low power consumption (500a per amplifier). these features make the el5120, el5220, and EL5420 ideal for a wide range of general- purpose applications. connected in voltage follower mode and driving a load of 10k ? and 12pf, the el5120, el5220, and EL5420 have a -3db bandwidth of 12mhz while maintaining a 10v/s slew rate. the el5120 is a single amplifier, the el5220 is a dual amplifier, and the EL5420 is a quad amplifier. operating voltage, input, and output the el5120, el5220, and EL5420 are specified with a single nominal supply voltage from 5v to 15v or a split supply with its total range from 5v to 15v. correct operation is guaranteed for a supply range of 4.5v to 16.5v. most el5120, el5220, and EL5420 spec ifications are stable over both the full supply range a nd operating temperatures of -40c to +85c. parameter variations with operating voltage and/or temperature are shown in the typical performance curves. the input common-mode voltage range of the el5120, el5220, and EL5420 extends 500mv beyond the supply rails. the output swings of the el5120, el5220, and EL5420 typically extend to within 80mv of positive and negative supply rails with load currents of 5ma. decreasing load currents will extend the output voltage range even closer to the supply rails. figure 25 shows the input and pin descriptions el5120 el5220 EL5420 pin name pin function equivalent circuit 1 1 1 vouta amplifier a output circuit 1 4 2 2 vina- amplifier a inverting input circuit 2 3 3 3 vina+ amplifier a non-inverting input (reference circuit 2) 5 8 4 vs+ positive power supply 5 5 vinb+ amplifier b non-inverting input (reference circuit 2) 6 6 vinb- amplifier b inverting input (reference circuit 2) 7 7 voutb amplifier b output (reference circuit 1) 8 voutc amplifier c output (reference circuit 1) 9 vinc- amplifier c inverting input (reference circuit 2) 10 vinc+ amplifier c non-inverting input (reference circuit 2) 2 4 11 vs- negative power supply 12 vind+ amplifier d non-inverting input (reference circuit 2) 13 vind- amplifier d inverting input (reference circuit 2) 14 voutd amplifier d output (reference circuit 1) v s+ gnd v s- v s+ v s- el5120, el5220, EL5420
11 output waveforms for the device in the unity-gain configuration. operation is from 5v supply with a 10k ? load connected to gnd. the input is a 10v p-p sinusoid. the output voltage is ap proximately 9.985v p-p . figure 25. operation with rail-to-rail input and output short circuit current limit the el5120, el5220, and EL5420 will limit the short circuit current to 120ma if the output is directly shorted to the positive or the negative supply . if an output is shorted indefinitely, the power dissipation could easily increase such that the device may be damaged. maximum reliability is maintained if the output continuous current never exceeds 30ma. this limit is set by the design of the internal metal interconnects. output phase reversal the el5120, el5220, and EL5420 are immune to phase reversal as long as the input voltage is limited from (v s -) -0.5v to (v s +) +0.5v. figure 26 show s a photo of the output of the device with the input voltage driven beyond the supply rails. although the device's output will not change phase, the input's overvoltage should be avoided. if an input voltage exceeds supply voltage by more than 0.6v, electrostatic protection diodes placed in t he input stage of the device begin to conduct and overvoltage damage could occur. figure 26. operation with beyond-the-rails input power dissipation with the high-output drive capa bility of the el5120, el5220, and EL5420 amplifiers, it is possible to exceed the 125c ?absolute-maximum junction temperature? under certain load current conditions. therefore, it is important to calculate the maximum junction temperature for the application to determine if load conditions need to be modified for the amplifier to remain in the safe operating area. the maximum power dissipation allowed in a package is determined according to: where: ?t jmax = maximum junction temperature ?t amax = maximum ambien t temperature ? ja = thermal resistance of the package ?p dmax = maximum power dissipation in the package the maximum power dissipation actually produced by an ic is the total quiescent supply current times the total power supply voltage, plus the power in the ic due to the loads, or: when sourcing, and: when sinking. where: ? i = 1 to 2 for dual and 1 to 4 for quad ?v s = total supply voltage ?i smax = maximum supply current per amplifier ?v out i = maximum output voltage of the application ?i load i = load current if we set the two p dmax equations equal to each other, we can solve for r load i to avoid device overheat. figures 27 and 28 provide a convenient way to see if the device will overheat. the maximum safe power dissipation can be found graphically, based on the package type and the ambient temperature. by using th e previous equation, it is a simple matter to see if p dmax exceeds the device's power derating curves. to ensure proper operation, it is important to observe the recommended derating curves in figures 27 and 28. v s =5v t a =25c a v =1 v in =10v p-p output input v s =2.5v t a =25c a v =1 v in =6v p-p 1v 100s 1v p dmax t jmax t amax ? ja -------------------------------------------- - = p dmax iv s i smax v s + ( v out i ) i load i ? + [] = p dmax iv s i smax v out i ( v s - ) i load i ? + [] = el5120, el5220, EL5420
12 all intersil u.s. products are manufactured, asse mbled and tested utilizing iso9000 quality systems. intersil corporation?s quality certifications ca n be viewed at www.intersil.com/design/quality intersil products are sold by description only. intersil corpor ation reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnishe d by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of paten ts or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see www.intersil.com figure 27. package power dissipation vs ambient temperature figure 28. package power dissipation vs ambient temperature unused amplifiers it is recommended that any unused amplifiers in a dual and a quad package be configured as a unity gain follower. the inverting input should be dire ctly connected to the output and the non-inverting input tied to the ground plane. driving capacitive loads the el5120, el5220, and EL5420 can drive a wide range of capacitive loads. as load capacitance increases, however, the -3db bandwidth of the device will decrease and the peaking increase. the amplifiers drive 10pf loads in parallel with 10k ? with just 1.5db of peaking, and 100pf with 6.4db of peaking. if less peaking is des ired in these applications, a small series resistor (usually between 5 ? and 50 ? ) can be placed in series with the output. however, this will obviously reduce the gain slightly. another method of reducing peaking is to add a ?snubber? circuit at the output. a snubber is a shunt load consisting of a resistor in series with a capacitor. values of 150 ? and 10nf are typical. the advantage of a snubber is that it does not draw any dc load current or reduce the gain power supply bypassing and printed circuit board layout the el5120, el5220, and EL5420 can provide gain at high frequency. as with any high-frequency device, good printed circuit board layout is necessary for optimum performance. ground plane construction is highly recommended, lead lengths should be as short as possible and the power supply pins must be well bypassed to reduce the risk of oscillation. for normal single supply operation, where the v s - pin is connected to ground, a 0.1f ceramic capacitor should be placed from v s + to pin to v s - pin. a 4.7f tantalum capacitor should then be connected in parallel, placed in the region of the amplifie r. one 4.7f capacitor may be used for multiple devices. this same capacitor combination should be placed at each supply pin to gr ound if split supplies are to be used. 3 2.5 2 1.5 1 0.5 0 0 255075100 150 ambient temperature (c) power dissipation (w) 2.500w ja =40c/w qfn16 125 85 1.136w 870mw ja =115c/w msop8 1.0w ja =100c/w tssop14 ja =88c/w so14 jedec jesd51-7 high effective thermal conductivity test board 486mw ja =206c/w msop8 833mw ja =120c/w so14 1 0.9 0.8 0.6 0.4 0.1 0 0 255075100 150 ambient temperature (c) power dissipation (w) 125 85 jedec jesd51-3 low effective thermal conductivity test board 0.2 606mw 0.7 0.3 0.5 667mw ja =165c/w tssop14 ja =150c/w qfn16 el5120, el5220, EL5420

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